瀏覽次數:472by:熾燄光電
4-inch Sapphire Substrates
|
Item
|
Specification
|
Unit
|
| Material |
>99.99% Single Crystal Al2O3 |
|
| Orientation |
C-axis[0001] tiled M-axis 0.2 ± 0.1°
|
Degree
|
| Primary Flat |
A-Axis [11-20] ± 0.2°
|
Degree
|
| Diameter |
100 ± 0.25
|
mm
|
| Thickness |
650 ± 20
|
μm
|
| Flat Length |
31 mm ± 1
|
mm
|
| TTV |
≦ 20
|
um
|
| Bow |
-20 ~ 0
|
um
|
| Warp |
≦50
|
um
|
| LTV |
≦15
|
um
|
| TIR |
≦15
|
um
|
| Frontside Surface Roughness |
≦10
|
Å
|
| Backside Surface Roughness |
0.6 ≦ Ra ≦1.2
|
um
|
| Wafer Edge |
R-Type
|
|
| Laser Mark |
Front side
|
|
| Package |
25 wafers in one cassette
|
|
| Other specifications are available upon request. | ||
#Sapphire#Wafer#4-inch#Substrates#藍寶石#基底板#4吋
