瀏覽次數:413by:熾燄光電
2-inch Sapphire Substrates
Item
|
Specification
|
Unit
|
Material |
>99.99% Single Crystal Al2O3 |
|
Orientation |
C-axis[0001] tiled M-axis 0.2 ± 0.1°
|
Degree
|
Primary Flat |
A-Axis [11-20] ± 0.2°
|
Degree
|
Diameter |
50.80 ± 0.15
|
mm
|
Thickness |
430 ± 15
|
μm
|
Flat Length |
16 mm ± 0.5
|
mm
|
TTV |
≦ 10
|
um
|
Bow |
-10 ~ 0
|
um
|
Warp |
≦15
|
um
|
LTV |
≦10
|
um
|
TIR |
≦10
|
um
|
Frontside Surface Roughness |
≦10
|
Å
|
Backside Surface Roughness |
0.8 ≦ Ra ≦1.2
|
um
|
Wafer Edge |
R-Type
|
|
Laser Mark |
Front side
|
|
Package |
25 wafers in one cassette
|
|
Other specifications are available upon request. |
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