瀏覽次數:417by:熾燄光電
Mono Wafer 156 *156mm
|
Item
|
Specification
|
Unit
|
Remarks
|
| Crystal Growth Method |
CZ
|
--
|
|
| Crystal Orientation |
<100> ± 3
|
degree
|
|
| Conductivity Type |
P
|
--
|
|
| Dopant |
Boron
|
--
|
|
| Resistivity |
0.5 ~ 3
|
Ω - cm
|
|
| EPD |
< 2000
|
ea/cm2
|
|
| Life Time |
> 10
|
µS
|
@Ingot Level |
| Oxygen Contents |
~ 1 x E18 at/cm3
|
|
ASTM F121-83 |
| Carbon Contents |
~ 1 x E18 at/cm3
|
|
|
| Diameter |
200 ± 0.5
|
mm
|
|
| Square length |
156 ± 0.5
|
mm
|
|
| Chord length |
125.2 ± 1.5
|
mm
|
|
| Thickness |
200 ± 20
|
µm
|
|
| TTV |
<= 40
|
µm
|
|
| Warp |
<= 100
|
µm
|
De-Stressed |
| Edge Chips |
<= 3
|
mm
|
|
| Front Surface |
As wire-saw
|
--
|
|
| Back Surface |
As wire-saw
|
--
|
|
| Appearance |
Free of cracks, craw feet and foreign materials; Saw mark depth <20 um |
||
| Packing | Shrink wrap ; per 100 wafers | ||
| Note | Mono-crystalline; Angle between square sides : 90 deg. +/-18' | ||
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春秋展業有限公司與逢甲大學航太工程系產學合作黑鑽奈米竹炭冶金術
