瀏覽次數:432by:熾燄光電
Mono Wafer 156 *156mm
|
Item
|
Specification
|
Unit
|
Remarks
|
| Crystal Growth Method |
CZ
|
--
|
|
| Crystal Orientation |
<100> ± 3
|
degree
|
|
| Conductivity Type |
P
|
--
|
|
| Dopant |
Boron
|
--
|
|
| Resistivity |
0.5 ~ 3
|
Ω - cm
|
|
| EPD |
< 2000
|
ea/cm2
|
|
| Life Time |
> 10
|
µS
|
@Ingot Level |
| Oxygen Contents |
~ 1 x E18 at/cm3
|
|
ASTM F121-83 |
| Carbon Contents |
~ 1 x E18 at/cm3
|
|
|
| Diameter |
200 ± 0.5
|
mm
|
|
| Square length |
156 ± 0.5
|
mm
|
|
| Chord length |
125.2 ± 1.5
|
mm
|
|
| Thickness |
200 ± 20
|
µm
|
|
| TTV |
<= 40
|
µm
|
|
| Warp |
<= 100
|
µm
|
De-Stressed |
| Edge Chips |
<= 3
|
mm
|
|
| Front Surface |
As wire-saw
|
--
|
|
| Back Surface |
As wire-saw
|
--
|
|
| Appearance |
Free of cracks, craw feet and foreign materials; Saw mark depth <20 um |
||
| Packing | Shrink wrap ; per 100 wafers | ||
| Note | Mono-crystalline; Angle between square sides : 90 deg. +/-18' | ||
#太陽能#單晶#矽片#Mono#Wafer#156mm#Solar
