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Mono Wafer 125*125mm

Parameter
Spec
Unit
Type
Mono Solar Wafer
 
Square
90 ± 0.3
degree
Type-Dopant
P/Boron
 
Crystal Orientation
<100> ± 1
degree
Oxygen Concentration
≦1.0 x 1018
atoms/cm3
Carbon Concentration
≦1.0 x 1017
atoms/cm3
Dislocation Density (Etching Pits)
≦2000
ea/cm3

 

Parameter
Resistivity
0.5 ~ 3.0
ohm-cm
Lifetime
≧10
μs

 

Geometry
Geometry
Pseudo Square
 
Thickness
200 ± 20
μm
TTV
≦30
μm
Dimension (W x W)
125 x 125 ± 0.5
mm
Diameter (φ)
165 ± 0.5
mm
Saw Marks
≦15
μm
Surface
As cut & cleaned
 
Edge Chip
None
 
BOW
≦30
mm
WARP
≦30
mm

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