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4-inch Sapphire Substrates

Item
Specification
Unit
Material
>99.99% Single Crystal Al2O3
 
Orientation
C-axis[0001] tiled M-axis 0.2 ± 0.1°
Degree
Primary Flat
A-Axis [11-20] ± 0.2°
Degree
Diameter
100 ± 0.25
mm
Thickness
650 ± 20
μm
Flat Length
31 mm ± 1
mm
TTV
≦ 20
um
Bow
-20 ~ 0
um
Warp
≦50
um
LTV
≦15
um
TIR
≦15
um
Frontside Surface Roughness
≦10
Å
Backside Surface Roughness
0.6 ≦ Ra ≦1.2
um
Wafer Edge
R-Type
 
Laser Mark
Front side
 
Package
25 wafers in one cassette
 
Other specifications are available upon request.

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